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CdTe photovoltaic devices with a ZnTe back contact have the potential to improve device performance and stability. After performing a sweep of ZnTe deposition and annealing temperatures, device performances were evaluated. Copper doping was performed after the ZnTe depositions by sublimating CuCl. Initial results indicate that ZnTe deposited and annealed for 20 minutes at 250°C improved device performance in terms of fill factor, J SC , and V OC as compared to other deposition temperatures. Copper doping also impacted device performance and a longer copper treatment on ZnTe led to a 17.6% device.more » « less
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A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (V OC. ) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.more » « less
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